Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers
نویسندگان
چکیده
منابع مشابه
Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si
The effects of low-dose Si implantation damage on diffusion of low-concentration P and As in Si wafers are investigated. Dopants are implanted at a low dose and subsequently preannealed to remove any self-damage. An enhanced diffusion of P is observed by directly comparing dopant profiles in damaged and undamaged regions. Monitoring effective diffusivity of P at various annealing temperatures a...
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ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 1974
ISSN: 0013-4651
DOI: 10.1149/1.2396806